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Power Electronics
Which of following devices has highest di/dt and dv/dt capability?
SIT.
GTO.
SCR.
SITH.
SIT.
GTO.
SCR.
SITH.
Answer
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Related Question
Power Electronics
The capacitance of reversed bised junction J2 in a thyristor is CJ2 = 20 pF and can be assumed to be independant of the off state voltage. The limiting value of the charging current to turn on the thyristor is 16 mA. What is the critical value of dv/dt?
1000 V/µs.
1200 V/µs.
600 V/µs.
800 V/µs.
1000 V/µs.
1200 V/µs.
600 V/µs.
800 V/µs.
Answer
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Power Electronics
Which of the following is used in SCR to protect from high dV / dt?
Fuse.
Snubber circuit.
Equalizing circuit.
Circuit breaker.
Fuse.
Snubber circuit.
Equalizing circuit.
Circuit breaker.
Answer
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Power Electronics
A power MOSFET has three terminals called
Drain, source and base.
Collector, emitter and base.
Drain, source and gate.
Collector, emitter and gate.
Drain, source and base.
Collector, emitter and base.
Drain, source and gate.
Collector, emitter and gate.
Answer
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Power Electronics
Between the peak point and the valley point of UJT emitter characteristics we have ___________ region
None of these
Saturation
Negative resistance
Cut-off
None of these
Saturation
Negative resistance
Cut-off
Answer
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Power Electronics
A diac has ___________ pn junctions
Two
Four
Three
None of these
Two
Four
Three
None of these
Answer
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