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Electronic Devices and Circuits
In a bipolar transistor, the emitter base junction has
Zero or reverse bias
Zero bias
Reverse bias
Forward bias
Zero or reverse bias
Zero bias
Reverse bias
Forward bias
Answer
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Related Question
Electronic Devices and Circuits
Forbidden energy gap in germanium at 0 K is about
2 eV
10 eV
5 eV
0.78 eV
2 eV
10 eV
5 eV
0.78 eV
Answer
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Electronic Devices and Circuits
The amount of photoelectric emission current depends on
None of these
Intensity of incident radiation
Both frequency and intensity of incident radiation
Frequency of incident radiation
None of these
Intensity of incident radiation
Both frequency and intensity of incident radiation
Frequency of incident radiation
Answer
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Electronic Devices and Circuits
Free electrons exist in
Conduction band
Second band
Third band
First band
Conduction band
Second band
Third band
First band
Answer
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Electronic Devices and Circuits
Fermi level is the amount of energy in which
Must be given to an electron move to conduction band
None of these
An electron can have at room temperature
A hole can have at room temperature
Must be given to an electron move to conduction band
None of these
An electron can have at room temperature
A hole can have at room temperature
Answer
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Electronic Devices and Circuits
Assertion (A): A VMOS can handle much larger current than other field effect transistors.Reason (R): In a VMOS the conducting channel is very narrow.
A is false but R is true
A is true but R is false
Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A
A is false but R is true
A is true but R is false
Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A
Answer
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