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Electronic Devices and Circuits
Forbidden energy gap in germanium at 0 K is about
2 eV
0.78 eV
10 eV
5 eV
2 eV
0.78 eV
10 eV
5 eV
Answer
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Related Question
Electronic Devices and Circuits
In a bipolar transistor, the base collector junction has
Zero or forward bias
Zero bias
Forward bias
Reverse bias
Zero or forward bias
Zero bias
Forward bias
Reverse bias
Answer
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Electronic Devices and Circuits
Assertion (A): A VMOS can handle much larger current than other field effect transistors.Reason (R): In a VMOS the conducting channel is very narrow.
Both A and R are true and R is correct explanation of A
A is false but R is true
A is true but R is false
Both A and R are true but R is not a correct explanation of A
Both A and R are true and R is correct explanation of A
A is false but R is true
A is true but R is false
Both A and R are true but R is not a correct explanation of A
Answer
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Electronic Devices and Circuits
In a bipolar transistor, the emitter base junction has
Zero bias
Zero or reverse bias
Reverse bias
Forward bias
Zero bias
Zero or reverse bias
Reverse bias
Forward bias
Answer
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Electronic Devices and Circuits
Light dependent resistors are
Intrinsic semiconductor
Highly doped semiconductor
Lightly doped semiconductor
Either A or B
Intrinsic semiconductor
Highly doped semiconductor
Lightly doped semiconductor
Either A or B
Answer
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Electronic Devices and Circuits
How many free electrons does a p type semiconductor has?
Any of the above
Only those produced by doping
Those produced by doping as well as thermal energy
Only those produced by thermal energy
Any of the above
Only those produced by doping
Those produced by doping as well as thermal energy
Only those produced by thermal energy
Answer
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