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Electronic Devices and Circuits
For a P-N diode, the number of minority carriers crossing the junction depends on
Forward bias voltage
Rate of thermal generation of electron hole pairs
None of these
Potential barrier
Forward bias voltage
Rate of thermal generation of electron hole pairs
None of these
Potential barrier
Answer
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Related Question
Electronic Devices and Circuits
For a NPN bipolar transistor, what is the main stream of current in the base region?
Diffusion of holes
Diffusion of electrons
Drift of holes
Drift of electrons
Diffusion of holes
Diffusion of electrons
Drift of holes
Drift of electrons
Answer
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Electronic Devices and Circuits
Which one of the following is not a characteristic of a ferroelectric material?
Electric dipole moment
High dielectric constant
No hysteresis
Ferroelectric characteristic only above the curie point
Electric dipole moment
High dielectric constant
No hysteresis
Ferroelectric characteristic only above the curie point
Answer
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Electronic Devices and Circuits
In a bipolar transistor, the emitter base junction has
Reverse bias
Zero bias
Forward bias
Zero or reverse bias
Reverse bias
Zero bias
Forward bias
Zero or reverse bias
Answer
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Electronic Devices and Circuits
In a bipolar transistor, the base collector junction has
Zero or forward bias
Reverse bias
Zero bias
Forward bias
Zero or forward bias
Reverse bias
Zero bias
Forward bias
Answer
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Electronic Devices and Circuits
In which of these is reverse recovery time nearly zero?
Tunnel diode
Zener diode
PIN diode
Schottky diode
Tunnel diode
Zener diode
PIN diode
Schottky diode
Answer
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