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Electronic Devices and Circuits
At room temperature the current in an intrinsic semiconductor is due to
Holes and electrons
Electrons
Holes
Ions
Holes and electrons
Electrons
Holes
Ions
Answer
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Related Question
Electronic Devices and Circuits
Free electrons exist in
Second band
Third band
First band
Conduction band
Second band
Third band
First band
Conduction band
Answer
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Electronic Devices and Circuits
As compared to bipolar junction transistor, a FET
Has better thermal stability
Has higher input resistance
Is less noisy
All of these
Has better thermal stability
Has higher input resistance
Is less noisy
All of these
Answer
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Electronic Devices and Circuits
When diodes are connected in series to increase voltage rating the peak inverse voltage per junction
should not exceed one third the breakdown voltage
should not exceed the breakdown voltage
should not exceed half the breakdown voltage
may be equal to or less than breakdown voltage
should not exceed one third the breakdown voltage
should not exceed the breakdown voltage
should not exceed half the breakdown voltage
may be equal to or less than breakdown voltage
Answer
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Electronic Devices and Circuits
For a P-N diode, the number of minority carriers crossing the junction depends on
Potential barrier
None of these
Rate of thermal generation of electron hole pairs
Forward bias voltage
Potential barrier
None of these
Rate of thermal generation of electron hole pairs
Forward bias voltage
Answer
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Electronic Devices and Circuits
The depletion layer width of Junction
Decreases with light doping
Increases with heavy doping
Is independent of applied voltage
Is increased under reverse bias
Decreases with light doping
Increases with heavy doping
Is independent of applied voltage
Is increased under reverse bias
Answer
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